mediu m powe r transistor ( 32 v , 0.5a) absolute maximum ratings (ta = 25 c) device marking 1 ) 2sa1036kqlt1 =hq 2 ) 2sa1036krlt1 =hr 1 2 3 pnp 1 2 3 sot-23 features 1) large i c . i cmax. = 500ma 2) low v ce(sat) . ideal for low-voltage operation. 3) structure epitaxial planar type pnp silicon transistor ordering information device package shipping 2sa1036kx lt1g 3000/tape & reel sot-23 we declare that the material of product compliance with rohs requirements. 2SA1036KXLT1 2012- willas electronic corp.
symbol min. typ. max. unit bvcbo 40 v bvceo 32 v bvebo 5 v icbo 1 a iebo 1 a vce(sat) 0.4 v hfe 120 390 ft 200 mhz cob 7 pf parameter collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ration vcb= 20v veb= 4v ic/ib= 100ma/ 10ma vce= 3v,ic= 10ma conditions ic= 100a ic= 1ma i e= 100a vce = 5v,ie =20ma,f=100mhz vcb= 10v,i e=0a,f=1mhz transition frequence output capacitance electrical characteristics (ta = 25 c) hfe values are classified as follows. item hfe q r 120~270 180~390 2012- willas electronic corp. mediu m powe r transistor ( 32 v , 0.5a) 2SA1036KXLT1
electrical characteristic curves 2012- willas electronic corp. mediu m powe r transistor ( 32 v , 0.5a) 2SA1036KXLT1
mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot-23 2012- willas electronic corp. mediu m powe r transistor ( 32 v , 0.5a) 2SA1036KXLT1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
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